Pulsed KrF laser-assisted direct deposition of graphitic capping layer for Cu interconnect
| Autor: | Hyeon Jun Hwang, Sang Kyung Lee, Tae Jin Yoo, Moon-Ho Ham, Chang Goo Kang, Chunhum Cho, Byoung Hun Lee, Sunwoo Heo |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Interconnection Materials science business.industry Analytical chemistry 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Laser assisted Laser 01 natural sciences Fluence law.invention law 0103 physical sciences Constant current stress Optoelectronics General Materials Science Irradiation 0210 nano-technology business Layer (electronics) Deposition (law) |
| Zdroj: | Carbon. 123:307-310 |
| ISSN: | 0008-6223 |
| DOI: | 10.1016/j.carbon.2017.07.075 |
| Popis: | A graphitic capping layer was successfully formed on top of Cu interconnects at room temperature, using a pulsed KrF laser. The change in temperature of the Cu line was maintained below 380 °C during laser irradiation with a fluence of 312.5 mJ/cm2. The resistance and critical current density of graphitic layer-capped Cu interconnects were improved by 2.8% and 5.2%, respectively. The lifetime of graphitic layer-capped Cu interconnects under a constant current stress was improved by 223%. |
| Databáze: | OpenAIRE |
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