| Autor: |
Guodan Wei, Zhuhua Xu, Chuying Sun, Miao He, Siyi Min, Cong Zhao, Zhenghao Liu, Jingzhou li, Wen-Di Li, Man-Chung Tang, Hongyan Fu, Feiyu Kang, Jiangyu Li, Yang Shen |
| Rok vydání: |
2022 |
| DOI: |
10.21203/rs.3.rs-1480222/v1 |
| Popis: |
Spectrally selective narrowband Si photodetection is critical for near-infrared (NIR) medical imaging, optical communication, light detection and autonomous mobiles. For conventional inorganic semiconductors such as silicon with broadband absorption from visible until 1.1 µm, it remains challenging to achieve narrowband photodetection without integrating optical filters. We demonstrate the very first narrowest NIR silicon photodetectors without any bandpass filter, reaching the full-width-at-half-maximum of only 26 nm at 912 nm. The narrowband response is inherently attributed to the resonant enhancement effect of optical microcavities formed by patterned Si nanograting combined with the organic D18:Y6 blend film. The Conductive-Atomic Force Microscope (C-AFM), Kelvin Probe Force Microscope (KPFM) and transient absorption (TA) spectroscopy characterization indicate effective charge transfer between Si and organic layers, significantly contributing to ultrafast photoresponse of 74 \(\mu s\). Therefore, this design concept opens up the new possibility of developing filter-less and effective low-cost NIR detection, enabling entirely new configurations of optical imaging devices with narrowband tunability for telecommunications and imaging applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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