Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

Autor:	Woo Sik Kim, Tae Song Kim, Hyung Ho Park, Soon Mok Ha
Rok vydání:	2001
Předmět:	Materials science Annealing (metallurgy) Analytical chemistry Condensed Matter Physics Space charge Electronic Optical and Magnetic Materials law.invention Capacitor Depletion region Sputtering law Electrode Substrate modification Perovskite (structure)
Zdroj:	Ferroelectrics. 259:283-288
ISSN:	1563-5112 0015-0193
Popis:	PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550 °C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550 °C) using a target containing 10 % excess PbO
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d4fa7147e0bcf415419fb497579a4239 https://doi.org/10.1080/00150190108008749 Zobrazit plný text záznamu