nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm

Autor:	N. I. Katsavets, I. V. Kogan, A. R. Sabirov, V. B. Kulikov, I. V. Shukov, V. P. Chaly, D. V. Maslov, A. L. Dudin, A. A. Solodkov
Rok vydání:	2018
Předmět:	Photocurrent Materials science Physics::Instrumentation and Detectors business.industry 02 engineering and technology Photoelectric effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Cutoff frequency Electronic Optical and Magnetic Materials Photodiode law.invention 010309 optics law 0103 physical sciences Band diagram Optoelectronics Cutoff 0210 nano-technology business Sensitivity (electronics) Energy (signal processing)
Zdroj:	Semiconductors. 52:1743-1747
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782618130110
Popis:	The results of studying the photoelectric characteristics of an nBn structure are presented. The photodiodes based on such structures may have a cutoff wavelength as high as 5 μm. Calculations based on these results show that such photodiodes have a threshold photosensitivity comparable with that of traditional analogs. An energy band diagram of the nBn structure is proposed based on experimental results and theoretical estimations; this diagram makes it possible to estimate the effect of potential barriers in the valence band of the wide-gap layer and at its boundaries with narrow-gap layers on the nBn-based photodiode sensitivity. The experimental results of studying the dependence of the photocurrent thermal-activation energy on the photodiode bias turned out to be important for developing the model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d4887451572c0de7a5bd53bf9478e8c4 https://doi.org/10.1134/s1063782618130110 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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