PHYSICAL MODEL OF LATERAL PIN PHOTODIODE GATED BY A TRANSPARENT ELECTRODE FABRICATED ON SOI FILM

Autor:	Tai-Hong Wang, Hai-Qing Xie, Wei-Qing Huang, Yun Zeng, Guo-Liang Zhang
Rok vydání:	2009
Předmět:	Materials science business.industry Silicon on insulator Photoelectric effect Photodiode law.invention Signal-to-noise ratio (imaging) Depletion region law Electric field Electrode Optoelectronics business Sensitivity (electronics)
Zdroj:	Optics and Photonics Letters. :15-20
ISSN:	1793-7140 1793-5288
DOI:	10.1142/s1793528809000040
Popis:	A novel photoelectric device-Lateral PIN photodiode gated by a transparent electrode (LPIN PD-GTE) fabricated on SOI film is proposed. Its physical model is presented based on standard semiconductor equations. In this device, recombination of carriers is ignored due to its operation in depletion region and high electric field strength (E > 1 × 104V/m). Numerical calculation indicates that LPIN PD-GTE has high sensitivity and SNR (Signal to Noise Ratio). This model allows one to predict and optimize the photoelectric characteristics of LPIN PD-GTE.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d38176715069d81b59381bb9bf8b9c0c https://doi.org/10.1142/s1793528809000040 Zobrazit plný text záznamu