Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered
| Autor: | Yuhang Zhao, Ao Guo, Shaojian Hu, Wang Yanling, Shoumian Chen, Yanling Shi, Yan Zeng, Xiaojin Li, Yabin Sun |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Hydrogen 020208 electrical & electronic engineering chemistry.chemical_element Gate insulator Insulator (electricity) 02 engineering and technology Trapping Mechanics Condensed Matter Physics Thermal diffusivity 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Diffusion profile chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical and Electronic Engineering Safety Risk Reliability and Quality Cmos process |
| Zdroj: | Microelectronics Reliability. 75:20-26 |
| ISSN: | 0026-2714 |
| Popis: | The NBTI degradation caused by hole trapping in gate insulator process-related preexisting traps (∆ VHT) and in generated bulk insulator traps (∆ VOT) can recover in several seconds (< 10 s), whereas the long-term recovery is dominated by interface trap generation (∆ VIT). In this paper, various explanations of NBTI recovery have been reviewed and a compact analytical long-term NBTI recovery model in which the slowing down diffusivity and locking effect of H2 are involved has been derived. The triangular diffusion profile of H2 is approximated and the fitting coefficient ξ of slowing down diffusivity is related to the stress and recovery time. Our proposed model has been validated by the previous theories and numerical calculation. Moreover, the investigation of NBTI recovery on a 40-nm CMOS process has been experimentally carried out and the results show that our compact NBTI recovery model can describe the long-term recovery well. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect