The Use of Tetraethyltin as an N Type Dopant Source in GAAs, ALGAAs, and ALAS for Lasers and Bragg Reflectors Grown by MOCVD

Autor:	R.V. Chelakara, Russell D. Dupuis, I. G. Neff, K. G. Fertitta, C. J. Pinzone
Rok vydání:	1994
Předmět:	Tetraethyltin Materials science Dopant business.industry chemistry.chemical_element Heterojunction Chemical vapor deposition Epitaxy chemistry.chemical_compound Van der Pauw method chemistry Optoelectronics Metalorganic vapour phase epitaxy Tin business
Zdroj:	MRS Proceedings. 340
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-340-283
Popis:	The use of Tetraethyltin (TESn) as a source of donors in GaAs and its A1xGal-xAs alloys with x varied from 0 to 1 has been investigated for the growth of heterostructures by low pressure metalorganic chemical vapor deposition. (LP-MOCVD). The donor activity increases in the binary and ternary alloys as a function of tetraethyltin molar flow fraction and with increasing temperature. High quality one quarter wave Distributed Bragg reflectors (DBRs) were grown with TESn as an n type dopant source with no degradation in reflectivity observed. No surface accumulation of tin was observed and the morphology of all epitaxial samples was excellent. Sn incorporation in AlAs produced n type material as determined by Van der Pauw Hall measurements. The use of TESn as a convenient and controllable dopant source in structures such as vertical cavity surface emitting lasers which incorporate DBRs as well as other heterostructure devices is therefore practical..
Databáze:	OpenAIRE
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