| Autor: |
K. H. Cirne, R. B. B. Santos, Nilberto H. Medina, M. A. G. Silveira, J. A. De Lima |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
2011 12th European Conference on Radiation and Its Effects on Components and Systems. |
| DOI: |
10.1109/radecs.2011.6131374 |
| Popis: |
IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT's) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 µm CMOS process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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