Self-assembled 2D finned covellite (CuS) for resistive RAM
| Autor: | Royston Kuan Khoon Tan, Ashutosh Rath, Andrew T. S. Wee, Daniel H. C. Chua, Zhen Quan Cavin Ng |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry chemistry.chemical_element 02 engineering and technology Sputter deposition Covellite 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Copper 0104 chemical sciences Resistive random-access memory chemistry Electrical resistivity and conductivity visual_art visual_art.visual_art_medium Optoelectronics Crystallite Thin film 0210 nano-technology business Electrical conductor |
| Zdroj: | Applied Physics Letters. 113:063102 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5027129 |
| Popis: | Copper sulfides (Cu2−xS) comprises a family of sulfides which possess good electrical and photovoltaic properties due to their self-doping (p-type) nature, attributed from the copper vacancies in their structure. Recently, metal sulfide thin films have been investigated for their resistive RAM behaviour due to the reversible formation of conductive bridges between crystalline structures. In this letter, 2D self-assembled finned covellite (CuS) was prepared via RF Magnetron Sputtering. This 2D finned CuS was found to be polycrystalline via TEM, exhibiting ReRAM behaviour with resistances having two orders of magnitude differences between 0 and −0.5 V. This fin structure eliminates the need for a multi-layered device which until now is the primary method of harnessing the ReRAM behaviour in copper sulphide. It gives rise to very low voltages of −3 V and 1 V for writing and reset, respectively, with a writing time of 20 ms. |
| Databáze: | OpenAIRE |
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