Void free at Interface of the SiC Film and Si Substrate
| Autor: | Toyotsugu Enokida, Yong Sun, Koichiro Masuda, Tatsuro Miyasato, Hiroyasu Hagino |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Void (astronomy)
Materials science Physics and Astronomy (miscellaneous) General Engineering General Physics and Astronomy Nanotechnology Plasma law.invention Tetragonal crystal system chemistry.chemical_compound chemistry Sputtering law Monolayer Silicon carbide Growth rate Composite material Photolithography |
| Zdroj: | Japanese Journal of Applied Physics. 43:L1517-L1519 |
| ISSN: | 0021-4922 |
| DOI: | 10.1143/jjap.43.l1517 |
| Popis: | The hollow voids formed at the SiC/Si interface during growth of SiC film can be free by pyramiding the Si substrate. The surface of the Si substrate was etched to tetragonal pyramids with an interval of 2 µm before the growth of the SiC film. The SiC film was grown by reaction of the pyramided Si substrate with the hydrogen plasma containing C and Si species. No hollow void was formed at the SiC/Si interface in the conditions of the growth temperature of 1000°C and the growth rate of 2.6×10-4 monolayers/s. |
| Databáze: | OpenAIRE |
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