| Autor: |
Kenneth R. Shull, Mark C. Hersam, E.F. Martin, Liam S. C. Pingree |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions On Nanotechnology. 4:255-259 |
| ISSN: |
1536-125X |
| DOI: |
10.1109/tnano.2004.837856 |
| Popis: |
A recently developed conductive atomic force microscopy (cAFM) technique, nanoscale impedance microscopy (NIM), is presented as a characterization strategy for nanoelectronic devices and circuits. NIM concurrently monitors the amplitude and phase response of the current through a cAFM tip in response to a temporally periodic applied bias. By varying the frequency of the driving potential, the resistance and reactance of conductive pathways can be quantitatively determined. Proof-of-principle experiments show 10-nm spatial resolution and ideal frequency-dependent impedance spectroscopy behavior for test circuits connected to electron beam lithographically patterned electrode arrays. Possible applications of NIM include defect detection and failure analysis testing for nanoscale integrated circuits. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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