Overlay performance of SR lithography in 64M DRAM layers
Autor: | Sunao Aya, Hideki Yabe, Yasuji Matsui, Kenji Marumoto, Hiroshi Watanabe, Takashi Hifumi, Kenji Itoga, Muneyoshi Suita, H. Sumitani |
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Rok vydání: | 2000 |
Předmět: |
Dynamic random-access memory
Computer science business.industry Process (computing) Synchrotron radiation Overlay Condensed Matter Physics Chip Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics law Optoelectronics Electrical and Electronic Engineering Stepper business Lithography Dram |
Zdroj: | Microelectronic Engineering. 53:587-590 |
ISSN: | 0167-9317 |
Popis: | Synchrotron radiation lithography is applied to the real dynamic random access memory process. Two full chip x-ray masks whose overlay accuracy is 19.2nm (x) and 26.4nm(y) are prepared. By using Canon x-ray stepper, total overlay accuracy less than 45nm is obtained. |
Databáze: | OpenAIRE |
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