Analysis and resolution of a thermally accelerated early life failure mechanism in a 40V GaN FET
| Autor: | Donald A. Gajewski, Randall D. Lewis, Benjamin M. Decker |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Failure mechanism High-electron-mobility transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Early life Surfaces Coatings and Films Electronic Optical and Magnetic Materials Accelerated life testing Reliability (semiconductor) Electronic engineering Optoelectronics Junction temperature Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 54:2675-2681 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2014.09.017 |
| Popis: | An early life failure mechanism was discovered on a 0.25-µm 40 V GaN FET technology. Through accelerated life testing (ALT), it was determined that the early life failure mechanism was thermally accelerated with a high activation energy, which means that it is not a concern a normal operating conditions up to the maximum rated junction temperature. Subsequent improvements to the process resulted in elimination of the early life failure mechanism. With the improved process, single-mode ALT lifetime distributions and excellent reliability performance down to low failure fractions were demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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