Effective surface modification of a germanium layer by using an atmospheric pressure plasma jet with a round ended nozzle
| Autor: | Hye-Joo Chung, Sunho Kim, Yong Kim, Min Kim, Jonghyuck Choi, Tae Hun Chung, Hea Min Joh, Min-Gue Kim, Hyung Soo Kim |
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| Rok vydání: | 2013 |
| Předmět: |
Jet (fluid)
Materials science Silicon business.industry Astrophysics::High Energy Astrophysical Phenomena Nozzle Analytical chemistry General Physics and Astronomy chemistry.chemical_element Atmospheric-pressure plasma Germanium Substrate (electronics) equipment and supplies complex mixtures Condensed Matter::Materials Science Semiconductor chemistry Physics::Plasma Physics Surface modification High Energy Physics::Experiment Atomic physics business human activities |
| Zdroj: | Journal of the Korean Physical Society. 63:996-1000 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.63.996 |
| Popis: | We investigate the surface modification of a germanium epitaxial layer grown on a silicon substrate by means of an atmospheric-pressure plasma jet. The plasma jet contains a large density of highly reactive radicals, as confirmed by optical emission spectra. The plasma jet with a nozzle with a round end has a higher current level compared to cylindrical and pencil-shaped nozzles, indicating the usefulness of this plasma jet for semiconductor processing. Raman spectra reveal a significant modification of the germanium surface under exposure to an atmospheric pressure plasma jet even for 1 min. The first-order Raman peak at 320 cm−1 has an asymmetric shoulder on the low-frequency side, which can be attributed to amorphization/oxidation of the germanium layer due to highly reactive radicals. The rapid surface change under short-time exposure indicates the practicality of the plasma jet for semiconductor processing. |
| Databáze: | OpenAIRE |
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