Statistical Evaluation of Electromigration Reliability at Chip Level
| Autor: | Dileep N. Netrabile, Timothy D. Sullivan, Paul S. McLaughlin, Jeanne P. Bickford, Peter A. Habitz, Baozhen Li |
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| Rok vydání: | 2011 |
| Předmět: |
Engineering
business.industry InformationSystems_INFORMATIONSYSTEMSAPPLICATIONS Failure probability ComputerApplications_COMPUTERSINOTHERSYSTEMS Integrated circuit design Chip Electromigration Electronic Optical and Magnetic Materials Reliability engineering Reliability (semiconductor) Chip-scale package Hardware_INTEGRATEDCIRCUITS Electronic engineering Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 11:86-91 |
| ISSN: | 1558-2574 1530-4388 |
| Popis: | Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for a chip design to achieve the best performance while maintaining chip level EM reliability. This paper discusses the relationship between element level and chip level EM failure probability and provides examples of EM evaluation of chip designs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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