First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application
| Autor: | D. T. Clark, McIntosh, Rar Young, A. B. Horsfall, D L Gordon, Sean Wright, Muhammad Idris, Ming Hung Weng |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Bridge (interpersonal) Reliability (semiconductor) CMOS Mechanics of Materials Power module 0103 physical sciences Gate driver General Materials Science Hybrid power 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:854-857 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.854 |
| Popis: | A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond. |
| Databáze: | OpenAIRE |
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