Transverse magnetovoltage in epitaxial La0.67Ca0.33MnO3 thin films
Autor: | C. Osthöver, U. Hasenkox, Carsten Mitze, Rainer Waser, R.R. Arons, F. Voges |
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Rok vydání: | 1998 |
Předmět: |
Magnetoresistance
Condensed matter physics Magnetic moment Chemistry Thermal Hall effect General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Magnetic field Condensed Matter::Materials Science Transverse plane Ferromagnetism Hall effect Materials Chemistry Condensed Matter::Strongly Correlated Electrons Thin film |
Zdroj: | Solid State Communications. 109:189-194 |
ISSN: | 0038-1098 |
Popis: | We present detailed Hall effect, planar Hall effect and resistance measurements of an epitaxial La 0.67 Ca 0.33 MnO 3 thin film. In the ferromagnetic regime the transverse voltage shows a similar dependence on the external magnetic field when it is applied perpendicular to (Hall effect) and in the plane of the film (planar Hall effect). By this observation it is established that the anomalous Hall effect is not the main origin of the transverse magnetovoltage. It is the anisotropic magnetoresistance (AMR), which we observe in both the longitudinal and the planar Hall configuration that causes the transverse magnetovoltage. |
Databáze: | OpenAIRE |
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