Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit
| Autor: | Sun Kyung Kim, Jun Ho Kim, Young Zo Yoo, Yoon Jong Moon, Tae Yeon Seong |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Process Chemistry and Technology Doping Analytical chemistry Surface finish Surfaces Coatings and Films Electronic Optical and Magnetic Materials Root mean square Optics Materials Chemistry Ceramics and Composites Transmittance Figure of merit business Sheet resistance |
| Zdroj: | Ceramics International. 41:14805-14810 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2015.08.001 |
| Popis: | In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×10 22 to 6.36×10 21 cm −3 , while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq −1 and the charge mobility increased from 24.15 to 25.42 cm 2 V −1 s −1 . The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10 −3 Ω −1 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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