The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors
| Autor: | Kyu Jun Cho, Hyung Sup Yoon, Hokyun Ahn, Jung-Hee Lee, Ryun-Hwi Kim, Haecheon Kim, Ji-Heon Kim, Sung-Jae Chang, Jae-Won Do, Jin-Mo Yang, Jong-Won Lim, Min Jeong Shin, Byoung-Gue Min, Hyun-Wook Jung |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Transconductance Analytical chemistry Gallium nitride 02 engineering and technology Surface finish 01 natural sciences law.invention chemistry.chemical_compound X-ray photoelectron spectroscopy Saturation current law 0103 physical sciences Materials Chemistry 010302 applied physics Tetramethylammonium hydroxide business.industry Transistor Metals and Alloys Heterojunction Surfaces and Interfaces 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Thin Solid Films. 628:31-35 |
| ISSN: | 0040-6090 |
| Popis: | AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic transconductance and saturation current, as well as more uniform off-state behavior with reduced off-current by a factor of 3.5 and gate leakage current by a factor of 4.2 in the devices with TMAH treatment. The analyses based on atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy show that the TMAH treatment effectively reduces the roughness of the recess-etched AlGaN surface and removes the native oxide layer on the AlGaN surface, suggesting a simple and viable route towards the fabrication of gate-recessed HEMTs based on AlGaN/GaN heterostructure with improved controllability and uniformity. |
| Databáze: | OpenAIRE |
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