Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory
| Autor: | Jin-Cheng Zheng, Jung-Hui Chen, Simon M. Sze, Hui-Chun Huang, Ming-Hui Wang, Chih-Cheng Shih, Min-Chen Chen, Wan-Ching Su, Wen-Jen Chen, Yi-Ting Tseng, Tian-Jian Chu, Tsung-Ming Tsai, Cheng-Hsien Wu, Kuan-Chang Chang, Ting-Chang Chang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Direct current Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials law.invention Indium tin oxide Resistive random-access memory law 0103 physical sciences Electrode Optoelectronics Electrical and Electronic Engineering Thin film 0210 nano-technology Alternating current business Voltage |
| Zdroj: | IEEE Electron Device Letters. 37:1276-1279 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2016.2599218 |
| Popis: | A lower switching voltage of indium–tin–oxide (ITO)-based resistance random access memory (RRAM) with an inserted SiO2 thin film was presented. The amplitude of switching voltage of device was below 0.2 V whether measured by direct current or alternating current sweep operation. Notably, the observed reset voltage increased with temperature. To clarify the switching mechanism, conduction current fitting and switching voltage statistics were applied to explore the regular voltage variation dependent on temperature. In addition, a reaction model was proposed to explain the oxygen concentration gradient induced between the inserted SiO2 and ITO electrode on the ITO-based RRAM device. |
| Databáze: | OpenAIRE |
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