Evaluation of a 'Field Cage' for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime
Autor: | Brian D. Tierney, Matthew J. Marinella, Robert Kaplar, Sandeepan DasGupta, Jeramy R. Dickerson, Albert G. Baca, Sukwon Choi, Shahed Reza |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Engineering Field (physics) business.industry Voltage divider Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Electric field 0103 physical sciences Optoelectronics Breakdown voltage Power semiconductor device Transient (oscillation) Electrical and Electronic Engineering 0210 nano-technology business Electrical impedance Voltage |
Zdroj: | IEEE Transactions on Electron Devices. 64:3740-3747 |
ISSN: | 1557-9646 0018-9383 |
DOI: | 10.1109/ted.2017.2729544 |
Popis: | A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of $dV_{\mathrm {ds}}/dt = 100$ V/ns. For both dc and transient results, the voltage between the gate and drain is laterally distributed, ensuring that the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving the breakdown voltage scalability to a few kilovolts. |
Databáze: | OpenAIRE |
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