Low Temperature Deposition of High Performance ITO Using a Co-Plasma Approach
| Autor: | Simon, D.K., Fengler, F., Jordan, P.M., Sontag, D., Mikolajick, T., Dirnstorfer, I. |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20142014-2av.3.24 |
| Popis: | 29th European Photovoltaic Solar Energy Conference and Exhibition; 1028-1031 Tin-doped indium oxide (ITO) is known for its potential to combine excellent transparency with low resistivity. To achieve best performance usually high process temperatures (≥ 200 °C) are applied. However, those values are not suitable for application on temperature critical layers, such as amorphous silicon for heterojunction solar cells. Conventional low-temperature depositions usually show lower performance due to low surface diffusion during the growth process. To improve the ITO properties, a substrate plasma is applied additionally to the conventional target plasma. With this co-plasma approach, the crystallinity of the ITO layers as well as resistivity and absorption are clearly improved. An ITO layer deposited at 100 °C reaches a resistivity of 500 μΩcm and an absorption coefficient below 5·103 cm-1. The efficiency of a silicon heterojunction solar cell with co-plasma grown ITO is 19.3 %. |
| Databáze: | OpenAIRE |
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