Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs

Autor:	Naoka Nagamura, Yoshinobu Takahashi, Akihiko Otsuki, Hiroshi Nohira, Masaharu Oshima, Aki Takigawa, Shun Konno, Daisuke Mori, Masato Kotsugi
Rok vydání:	2018
Předmět:	Materials science business.industry Bioengineering Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Band bending Mechanics of Materials Nano Trench Optoelectronics Reactive-ion etching business Spectroscopy Biotechnology
Zdroj:	e-Journal of Surface Science and Nanotechnology. 16:257-261
ISSN:	1348-0391
DOI:	10.1380/ejssnt.2018.257
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cae8d3050ca69661594e7b1d4cf63c45 https://doi.org/10.1380/ejssnt.2018.257 Zobrazit plný text záznamu