Very low temperature MBE process for SiGe and Si device structures

Autor:	J. Luy, E. Kasper, H. Dambkes
Rok vydání:	2003
Předmět:	Materials science Silicon business.industry Doping chemistry.chemical_element High-electron-mobility transistor Epitaxy Lattice mismatch chemistry Molecular beam epitaxial growth Scientific method Electronic engineering Optoelectronics business Molecular beam epitaxy
Zdroj:	Technical Digest., International Electron Devices Meeting.
DOI:	10.1109/iedm.1988.32876
Popis:	The growth and doping of Si and SiGe layers on Si substrates were investigated by molecular beam epitaxy (Si-MBE). Growth took place at temperatures below the standard Si-MBE process regime ( >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cae761d246db0800b99d57e0f11e396f https://doi.org/10.1109/iedm.1988.32876 Zobrazit plný text záznamu