Electrical characterization of InGaN quantum well p–n heterostructures
| Autor: | A. D. Batchelor, Phillip E. Russell, K. L. Bunker, J. C. González, M. I. N. da Silva |
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| Rok vydání: | 2003 |
| Předmět: |
Conventional transmission electron microscope
Microscope Materials science business.industry Scanning electron microscope Electron beam-induced current General Engineering law.invention Optics law Scanning transmission electron microscopy Energy filtered transmission electron microscopy Optoelectronics Electron beam-induced deposition business Quantum well |
| Zdroj: | Microelectronics Journal. 34:455-457 |
| ISSN: | 0026-2692 |
| DOI: | 10.1016/s0026-2692(03)00072-7 |
| Popis: | In this work, two methods for electrical characterization of InGaN quantum well p–n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the InGaN quantum well, the location of the p–n junction, and the depletion layer. HR-EBIC was implemented in a Scanning Transmission Electron Microscope to take advantage of the high resolution chemical imaging capabilities of this microscope, such as Z-Contrast and Energy Dispersive X-ray Spectroscopy, and the small spread of the high energy electron beam in the electron transparent thin sample that allows electron beam induced current imaging with nanometer resolution. |
| Databáze: | OpenAIRE |
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