Correlation of electrical conductivity and photoluminescence in nanoporous silicon

Autor:	Brahim Bessais, M. Khardani, M. Bouaïcha
Rok vydání:	2006
Předmět:	Work (thermodynamics) Photoluminescence Materials science Analytical chemistry Oxide Bioengineering Porous silicon Anode Biomaterials chemistry.chemical_compound chemistry Mechanics of Materials Quantum dot Electrical resistivity and conductivity Porosity
Zdroj:	Materials Science and Engineering: C. 26:486-489
ISSN:	0928-4931
DOI:	10.1016/j.msec.2005.10.021
Popis:	The effective electrical conductivity of p type porous silicon is determined both theoretically and experimentally for different porosities ranging from 30% to 80%. In this work, Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon samples were prepared by the electrochemical etching method for different values of the anodic current. The porous material is assumed to be formed of three phases; vacuum, oxide and Si nanocrystallites. The analytical expression of the electrical conductivity of the Si nanocrystallites was established using the quantum confinement theory. This enables us to correlate the electrical conductivity of a PS layer, to the peak energy of its photoluminescence (PL) spectrum. A perfect agreement between the theoretical and the experimental electrical conductivity values was obtained for all prospected PS porosities. The results are discussed as regard to other works.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ca1cf4d2dc2482e63cd513d7296c295b https://doi.org/10.1016/j.msec.2005.10.021 Zobrazit plný text záznamu Full Text from ScienceDirect