Gated SiGe PIN diodes exposed to visible light spectrum and heavy-ion radiation
| Autor: | Carla Novo, M. A. G. Silveira, Renato Giacomini, R. T. Buhler |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Heavy ion radiation Computer simulation 010308 nuclear & particles physics business.industry PIN diode Hardware_PERFORMANCEANDRELIABILITY Substrate (electronics) Radiation 01 natural sciences 030218 nuclear medicine & medical imaging law.invention 03 medical and health sciences 0302 clinical medicine Optics Interference (communication) law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES business Particle beam Hardware_LOGICDESIGN Visible spectrum |
| Zdroj: | 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). |
| DOI: | 10.1109/ulis.2016.7440084 |
| Popis: | This paper studies gated PIN diodes designed at Centro Universitario da FEI and fabricated at Global Foundries in the GF0.13 technology, using SiGe substrate and four gate setups. The analysis is made through experimental measurements and numerical simulations of PIN diodes in dark condition, illuminated with visible light or exposed to heavy-ion radiation. Particle beam radiation present in hazard environments may cause circuit malfunctions due to interference in the device response. This paper conducts a brief, but depth study of how these variables impact the PIN diode performance, important to space and sensor applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|