Autor: |
Ee Leong Lim, Soo Jin Chua, Lip Fah Chong, Norman Soo Seng Ang, Yan Jun Wang, Jianrong Dong, Jinghua Teng |
Rok vydání: |
2007 |
Předmět: |
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Zdroj: |
Advanced Materials Research. 31:189-191 |
ISSN: |
1662-8985 |
DOI: |
10.4028/www.scientific.net/amr.31.189 |
Popis: |
In this paper, we report a DFB laser diode with a buried SiO2 grating. Epitaxy lateral overgrowth by metalorganic chemical vapour deposition (MOCVD) is conducted to grow the p-type InP cladding layers in the nano-patterned dielectric grating template. The large refractive index difference between SiO2 and InP results an index coupling coefficient κ of about 250 cm-1. The fabricated DFB laser showed a side mode suppression ratio larger than 45 dB measured. The technology developed can also be used for other applications that require high efficiency grating structure. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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