12% Efficiency CuIn(Se,S)2 Photovoltaic Device Prepared Using a Hydrazine Solution Process
| Autor: | Min Yuan, S. Jay Chey, Oki Gunawan, Wei Liu, David B. Mitzi, Andrew J. Kellock |
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| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | Chemistry of Materials. 22:1010-1014 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm901950q |
| Popis: | Thin-film CuIn(Se,S)2 (i.e., CIS) absorbers have been solution-deposited using a hydrazine-based approach that offers the potential to significantly lower the fabrication cost for CIS solar cells. In this method, metal chalcogenides are completely dissolved in hydrazine, forming a homogeneous precursor solution. Film deposition is demonstrated by spin-coating of the precursor solution onto various substrates, including Mo-coated glass and thermally oxidized silicon wafers. Using this approach, no postdeposition anneal in a toxic Se or S-containing environment is needed to obtain CIS films. Instead, only a simple heat-treatment in an inert atmosphere is required, resulting in CIS films with good crystallinity. Bandgap tuning can readily be achieved by varying the amount of S incorporated into the film. Complete CIS devices with glass/Mo/CIS/CdS/i-ZnO/ITO structure are fabricated using absorbers produced via this hydrazine-based approach. Air Mass 1.5G power conversion efficiencies of as high as 12.2% have ... |
| Databáze: | OpenAIRE |
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