Dipolar Biexcitons in Lateral Traps in Si/SiGe/Si Heterostructures
| Autor: | T. M. Burbaev, Nikolai N. Sibeldin, V. V. Ushakov, M. L. Skorikov, V. A. Tsvetkov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Condensed Matter::Quantum Gases
Photoluminescence Materials science Condensed matter physics Exciton Relaxation (NMR) General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Spectral line 010305 fluids & plasmas Condensed Matter::Materials Science 0103 physical sciences Charge carrier 010306 general physics Biexciton Excitation |
| Zdroj: | Bulletin of the Russian Academy of Sciences: Physics. 82:822-825 |
| ISSN: | 1934-9432 1062-8738 |
| DOI: | 10.3103/s1062873818070122 |
| Popis: | Si/Si1–xGex/Si heterostructures with large-scale (micrometer-size) lateral potential fluctuations at the upper SiGe/Si-cap heterointerface are grown. These potential fluctuations are caused by partial strain relaxation in the SiGe layer. Low-temperature photoluminescence (PL) spectra show that these fluctuations form lateral traps where photoexcited nonequilibrium charge carriers are accumulated and bind into dipolar excitons, which ultimately recombine. At temperatures below 6 K, a new narrow line with a width considerably less than that of the dipolar exciton PL line emerges in the spectra as the level of excitation increases. It is shown that this line is associated with the recombination of dipolar biexcitons in large-scale traps. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink