Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
| Autor: | Shih Cheng Chen, Chun-Yen Chang, S. M. Sze, Shih Ching Chen, Po-Tsun Liu, Jing Yi Chin, Chenhsin Lien, Ting-Chang Chang, Yung-Chun Wu, Po Shun Lin |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon business.industry Transistor Gate dielectric Electrical engineering Nanowire chemistry.chemical_element Surfaces and Interfaces General Chemistry engineering.material Condensed Matter Physics Surfaces Coatings and Films law.invention Non-volatile memory Polycrystalline silicon chemistry Stack (abstract data type) law Thin-film transistor Materials Chemistry engineering Optoelectronics business |
| Zdroj: | Surface and Coatings Technology. 202:1287-1291 |
| ISSN: | 0257-8972 |
| Popis: | In this work, we study a polycrystalline silicon thin-film transistor (poly-Si TFT) combined with a silicon–oxide–nitride–oxide–silicon (SONOS) stack gate dielectric and nanowire channels structure for the applications of transistor and nonvolatile memory. The proposed device named with NW SONOS-TFT has superior electrical characteristics of transistor and also can exhibit high program/erase (P/E) efficiency under adequate bias operation. The V th decreases from 2.45 V to 1.76 V and subthreshold swing reduces from 0.57 V/decade to 0.42 V/decade. The programming V th shift is improved from 2.2 V to 3.3 V at 14 V for 1 s and the erasing V th shift is improved from − 0.3 V to − 1.3 V at − 14 V for 1 s. The dramatic improvement can be attributed to the tri-gate structure and corner effect. In addition, the memory device has a promising data retention behavior at 85 °C and a 0.8 V memory window after 5 × 10 3 P/E cycles operations. Hence, the NW SONOS-TFT is suitable for application in the future system-on-panel display. |
| Databáze: | OpenAIRE |
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