Growth control of carbon nanotubes by plasma enhanced chemical vapor deposition
| Autor: | Atsushi Suzuki, Hideki Sato, Takamichi Sakai, Kazuo Kajiwara, Koichi Hata, Yahachi Saito |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Nanoparticle Nanotechnology Carbon nanotube Combustion chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films law.invention Field electron emission Nanoelectronics Plasma-enhanced chemical vapor deposition law Carbon nanotube supported catalyst Thin film Instrumentation |
| Zdroj: | Vacuum. 83:515-517 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2008.04.017 |
| Popis: | Plasma enhanced chemical vapor deposition (PECVD), which enables growth of vertically aligned carbon nanotubes (CNTs) directly onto a solid substrate, is considered to be a suitable method for preparing CNTs for nanoelectronics applications such as electron sources for field emission displays (FEDs). For these purposes, establishment of an efficient CNT growth process has been required. We have examined growth characteristics of CNTs using a radio frequency PECVD (RF-PECVD) method with the intention to develop a high efficiency process for CNT growth at a low enough temperature suitable for nanoelectronics applications. Here we report an effect of pretreatment of the catalyst thin film that plays an important role in CNT growth using RF-PECVD. Results of this study show that uniform formation of fine catalyst nanoparticles on the substrate is important for the efficient CNT growth. |
| Databáze: | OpenAIRE |
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