Structural inhomogeneities in amorphous silicon layers observed by X-ray diffraction and Raman scattering
| Autor: | H. Touir, J. Dixmier, J. F. Morhange |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Diffraction
Amorphous silicon Materials science Silicon chemistry.chemical_element General Chemistry Sputter deposition Condensed Matter Physics Molecular physics Condensed Matter::Materials Science symbols.namesake chemistry.chemical_compound Crystallography chemistry X-ray crystallography Materials Chemistry symbols Wave vector Raman spectroscopy Raman scattering |
| Zdroj: | Solid State Communications. 110:315-319 |
| ISSN: | 0038-1098 |
| Popis: | Structural inhomogeneities in amorphous silicon layers, prepared by r.f. magnetron sputtering, were detected and characterized by X-ray diffraction (XRD) and Raman scattering using samples either as-deposited or post-annealed at increasing temperatures. These inhomogeneities, which can be interpreted in terms of disordered domains around the voids and which depend on the annealing temperature, are identified through analysis of the first halo profiles of XRD patterns as well as of the low-frequency part of the Raman spectra. The first halo profile has been well reproduced by using two components, one located at the low wave vector (left side) of the 111 line of c-Si (relaxed domains), the other one at the other side (disordered domains). The Raman spectra at low frequency (ω |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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