Fast preparation of (111)-oriented β-SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2
| Autor: | Hitoshi Ohmori, Qingfang Xu, Lianmeng Zhang, Qingyun Sun, Jiasheng Yan, Qizhong Li, Shusen Li, Peipei Zhu, Takashi Goto, Ji Shi, Mingxu Han, Rong Tu, Song Zhang, Meijun Yang, Hai Wen Li |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology Microstructure Laser 01 natural sciences 0104 chemical sciences law.invention chemistry.chemical_compound chemistry law Materials Chemistry Ceramics and Composites Silicon carbide Organic chemistry Graphite Laser power scaling 0210 nano-technology Hexamethyldisilane Carbon |
| Zdroj: | Journal of the American Ceramic Society. 101:1471-1478 |
| ISSN: | 0002-7820 |
| DOI: | 10.1111/jace.15315 |
| Popis: | (111)-oriented β-SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH3)3-Si(CH3)3, HMDS) without H2. The effects of laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the microstructure, carbon formation and deposition rate (Rdep) were investigated. β-SiC films with carbon formation and graphite films were prepared at PL ≥ 170 W and Ptot ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. β-SiC films without carbon formation were obtained at Ptot = 400 to 800 Pa and PL = 130 to 170 W. The maximum Rdep was about 50 μm h−1 at PL = 170 W, Ptot = 600 Pa and Tdep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions. This article is protected by copyright. All rights reserved. |
| Databáze: | OpenAIRE |
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