Spectroscopic and chemical study of the damage induced by ion implantation in scandium diphthalocyanine thin films
| Autor: | M. Salvi, M. Gauneau, M. Leclerc, Michel Delamar, C. Clarisse, S. Robinet |
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| Rok vydání: | 1991 |
| Předmět: |
Hydrogen
Chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Infrared spectroscopy Surfaces and Interfaces Photochemistry Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Secondary ion mass spectrometry Ion implantation X-ray photoelectron spectroscopy Materials Chemistry Scandium Thin film |
| Zdroj: | Thin Solid Films. 200:385-396 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(91)90210-o |
| Popis: | Ion-implanted scandium diphthalocyanine thin films have been studied by visible and IR absorption spectroscopies. Chemical analyses (X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, Rutherford backscattering) have also been performed. These different analyses show that the films are damaged during the implantation process, and that the alterations increase in severity with the implantation parameters (current density, fluence, energy) rather than with the chemical nature of the implanted ions. The concentrations of the main elements are modified in the implanted region with a clear decrease in volatile species such as hydrogen and nitrogen, and a large increase in the oxygen concentration (around 20 times higher in the implanted region). It is supposed that many bonds are therefore broken, giving a high density of free radicals and inducing at once oxygen “trapping” and a recombination of the aromatic rings on adjacent rings, starting cyclization in the material. |
| Databáze: | OpenAIRE |
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