Study on the Vt variation and bias temperature instability characteristics of TiN/W and TiN metal buried-gate transistor in DRAM application
| Autor: | Tae-Su Jang, Seok-Hee Lee, Min-Soo Yoo, Seon-Yong Cha, Jae-Goan Jeong, Yong-Taik Kim, Kyungdo Kim |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Transistor chemistry.chemical_element Chemical vapor deposition law.invention Metal Positive bias temperature instability chemistry law Temperature instability visual_art Electronic engineering visual_art.visual_art_medium Optoelectronics Metal gate Tin business Dram |
| Zdroj: | 2014 IEEE International Reliability Physics Symposium. |
| Popis: | The Vt variation and positive bias temperature instability (PBTI) of TiN/W and TiN metal buried-gate (BG) cell transistors in DRAM are characterized. The use of TiN gate shows a larger Vt variation and different PBTI behavior as compared with TiN/W gate and these are attributed to the formation of chlorine (Cl)-related trap sites during the etch-back process of metal gate. This indicates that Cl in the chemical vapor deposition (CVD) TiN gate is responsible for the phenomena. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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