On the issue of structure-chemical features of silicon oxides and thermal emission of singlet oxygen
| Autor: | V. B. Kopylov |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Silicon
Singlet oxygen Chemical structure Cationic polymerization chemistry.chemical_element General Chemistry Photochemistry Electron spectroscopy chemistry.chemical_compound chemistry Volume (thermodynamics) Chemical physics Excited state Specific surface area Physics::Atomic and Molecular Clusters Physics::Chemical Physics |
| Zdroj: | Russian Journal of General Chemistry. 78:347-354 |
| ISSN: | 1608-3350 1070-3632 |
| DOI: | 10.1134/s1070363208030031 |
| Popis: | Special features of the chemical structure of silicon oxides were analyzed by the methods of vibrational and electronic spectroscopy and it was found that cationic (Si-Si) and anionic (O2 and O3) sublattices contain isolated individual Si-CO oscillators, including electron-excited oscillators, and homoatomic bonds. By means of chromatographic and sorption-calorimetric analyses inverse dependence of singlet oxygen specific thermal emission on specific surface area of samples was found that corresponds to volume generation of excited states. |
| Databáze: | OpenAIRE |
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