III-V HEMTs for Cryogenic Low Noise Amplifiers
| Autor: | Arsalan Pourkabirian, Jörgen Stenarson, Eunjung Cha, Jan Grahn, Niklas Wadefalk |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors business.industry Amplifier Transistor Astrophysics::Instrumentation and Methods for Astrophysics High-electron-mobility transistor Cryogenics Dissipation Noise (electronics) law.invention chemistry.chemical_compound chemistry law Logic gate Indium phosphide Optoelectronics business |
| Zdroj: | 2020 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm13553.2020.9372031 |
| Popis: | The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special circumstances occurring in III- V materials and device operating under cryogenic conditions. We report on how to electrically stabilize the cryogenic two-finger HEMT at low temperature making it possible to design low-noise amplifiers with state of the art noise performance up to mm-wave. We also demonstrate recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation below 1 mW dc power dissipation, of interest for qubit readout electronics. |
| Databáze: | OpenAIRE |
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