High current and current rise rate thyristor based switches
| Autor: | S. K. Lyubutin, S. N. Tsyranov, B.G. Slovikovsky, S. N. Rukin, A. V. Ponomarev, A. I. Gusev |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Thyristor chemistry.chemical_element 01 natural sciences 010305 fluids & plasmas law.invention Pulse (physics) Capacitor Full width at half maximum chemistry law 0103 physical sciences Optoelectronics Wafer business Electrical conductor Voltage |
| Zdroj: | 2017 IEEE 21st International Conference on Pulsed Power (PPC). |
| DOI: | 10.1109/ppc.2017.8291162 |
| Popis: | Operation of the thyristor-based switches triggered in impact-ionization wave mode has been investigated. The thyristor switch contained two series connected tablet thyristors having a silicon wafer of 56 mm in diameter. At applying across the switch a triggering pulse with a voltage rise rate dU/dt of over 1 kV/ns the thyristors transition time to conductive state was less than 1 ns. It is shown that the maximum amplitude of no-failure current is increased with increasing dU/dt at the triggering stage. A possible mechanism of the dU/dt value effect on the thyristors breakdown current is discussed. In safety operation regime at dU/dt = 6 kV/ns (3 kV/ns per a single thyristor) the switch discharged 1-mF capacitor, which was charged to a voltage of 5 kV, to a resistive load of 18 mΩ. The following results were obtained: a peak current was 200 kA, an initial dI/dt was 58 kA/ps, a FWHM was 25 ps, and switching efficiency was 0.97. It is shown that a temperature of the silicon wafer is one of the main factors that affects on the thyristor switching process. Results of the thyristors testing in pulse repetition mode are given also. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|