Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer

Autor:	S. Alessandrino, B. Carbone, F. Cordiano, B. Mazza, A. Russo, W. Coco, M. Boscaglia, A. Di Salvo, A. Lombardo, D. Scarcella, E. Vitanza, P. Fiorenza
Rok vydání:	2022
Zdroj:	2022 IEEE International Reliability Physics Symposium (IRPS).
DOI:	10.1109/irps48227.2022.9764423
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c49d1408a6bc51255beef5e694747206 https://doi.org/10.1109/irps48227.2022.9764423 Zobrazit plný text záznamu