PMOSFET Reliability Study for Direct Silicon Bond (DSB) Hybrid Orientation Technology (HOT)
| Autor: | Tung-Hsing Lee, Li-Wei Cheng, B. Wilks, S. Joshi, Yao-Tsung Huang, M. Ries, M. Ramin, C. Stager, Chien-Ting Lin, C. Johnson, J. Bennett, K. Matthews, M. Freeman, Osbert Cheng, M. Seacrist, S. Chiang, L. Denning, M. Ma, B. Nguyen, Che-Hua Hsu, R. Wise, Angelo Pinto |
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| Rok vydání: | 2007 |
| Předmět: |
Electron mobility
Materials science Negative-bias temperature instability Dielectric strength Silicon business.industry Electrical engineering Dangling bond chemistry.chemical_element Electronic Optical and Magnetic Materials chemistry Gate oxide MOSFET Optoelectronics Wafer Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 28:815-817 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2007.902613 |
| Popis: | The use of hybrid orientation technology with direct silicon bond wafers consisting of a (110) crystal orientation layer bonded to a bulk (100) handle wafer provides exciting opportunities for easier migration of bulk CMOS designs to higher performance materials, particularly (110) Si for PMOSFETs for higher hole mobility. In this letter, a 3times mobility improvement and 36% drive current gain were achieved for PMOSFETs on (110) substrates. A systematic investigation of PMOSFET reliability was conducted, and significant degradation of negative bias temperature instability lifetime on (110) orientation was observed due to higher density of dangling bonds. We also report the crystal orientation dependence on ultrathin nitrided gate oxide time-dependent dielectric breakdown. |
| Databáze: | OpenAIRE |
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