Low noise superjunction MOSFET with integrated snubber structure
| Autor: | Hiroaki Yamashita, Takenori Yasuzumi, Wataru Saito, Masataka Tsuji, Masaru Izumisawa, Syotaro Ono, Hisao Ichijo |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Capacitive coupling Materials science business.industry 020208 electrical & electronic engineering 02 engineering and technology 01 natural sciences Capacitance Noise (electronics) Electromagnetic interference EMI 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Snubber Optoelectronics business RC circuit |
| Zdroj: | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2018.8393595 |
| Popis: | Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band. Switching noise generated during turn-off transient is absorbed by the snubber without increasing switching loss. We verified the concept by simulation and experiments, and confirmed better trade-off between EMI (Electromagnetic interference) and efficiency. |
| Databáze: | OpenAIRE |
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