Experimental characterization of hot-electron-induced effects and light emission in heterostructure devices
| Autor: | Enrico Zanoni, Claudio Canali, Andrea Neviani, C. Tedesco, Manfredo Manfredi |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
business.industry Transistor Bipolar junction transistor Monte Carlo method Heterojunction High-electron-mobility transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Impact ionization law Materials Chemistry Optoelectronics Light emission Electrical and Electronic Engineering business Voltage |
| Zdroj: | Semiconductor Science and Technology. 9:651-658 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | This paper reviews the most recent experimental results concerning the characterization of hot-electron effects and light emission in GaAs MESFETS, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMTS), and AlGaAs/GaAs heterojunction bipolar transistors (HBTS). In MESFETS and HEMTS, light emission has been correlated with impact-ionization-induced gate current, providing insights into possible emission mechanisms. In HBTS, impact ionization can be evaluated by measuring the changes in the base current as a function of base-collector voltage. The measured multiplication factor correlates well with the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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