Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate
| Autor: | Yi Li, Honghai Deng, Youhua Zhu, Meiyu Wang, Takashi Egawa, Haihong Yin, Shuxin Tan, X.L. Guo |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Superlattice 02 engineering and technology Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials law.invention Transmission electron microscopy law 0103 physical sciences Optoelectronics Quantum efficiency Metalorganic vapour phase epitaxy 0210 nano-technology business Light-emitting diode |
| Zdroj: | Electronic Materials Letters. 13:142-146 |
| ISSN: | 2093-6788 1738-8090 |
| Popis: | GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized. |
| Databáze: | OpenAIRE |
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