Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

Autor:	Michael T. Lanagan, Paul Sunal, Mark W. Horn, Guneet Sethi
Rok vydání:	2009
Předmět:	Zirconium Materials science Analytical chemistry chemistry.chemical_element Crystal growth Surfaces and Interfaces Substrate (electronics) Sputter deposition Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry Sputtering law Crystallite Thin film Crystallization
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:577-583
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.3119669
Popis:	Zirconium oxide thin films were prepared through reactive magnetron sputtering with a zirconium target using pulsed-dc and radio frequency (rf) sources. The film crystallization was studied with respect to sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, and substrate material. The crystallization was studied through x-ray diffraction (XRD) 2θ scans and was quantified with peak full width at half maximum and crystallite size. Crystallization of the films was found to occur over a broad range of sputter deposition parameters, while the amorphous phase was produced only at high sputtering pressure and low sputtering power. With a decrease in sputtering pressure or power, the crystallite size decreased. Energy dispersive x-ray spectroscopy, electron microscopy, and XRD analysis revealed that at very low pressures, these films are polyphase assemblages of cubic phases of oxygen deficient zirconium oxides such as ZrO and Zr2O. ...
Databáze:	OpenAIRE
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