| Autor: |
Jay A. Skidmore, Kong Weng Lee, Lei Xu |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
International Symposium on Microelectronics. 2013:000336-000340 |
| ISSN: |
2380-4505 |
| Popis: |
The trends of increasing demand of higher power laser devices with increased current capacity and total package cost reduction to improve dollars per watt of laser output power have resulted in the need for alternatives to traditional gold wirebonds on gold-plated substrates. Copper and aluminum wires are considered to be the leading candidates due to their vast reliability database in the semiconductor industry and cost advantages. Room temperature (25°C) wirebonding with a robust process window and high yield is required for high-volume, low-cost applications. The wirebonds must also meet or exceed the stringent reliability requirements of 1000 hours at 85°C/85%RH damp heat (DH) and 1000 hrs at 175°C high temperature storage (HTS) testing. In this study, 10 mils round thick copper and aluminum wire bonding has been successfully developed at room temperature with no intermetallic failure or void formation at the Al/Au and Cu/Au interfaces after 1000 hours of DH and HTS testing. Further investigation with corrosion-resistant Al wire shows excellent pull strength and wire shear per Mil-Std 883 after 2000 hours of DH and HTS testing with no evidence of void formation at the Al/Au interface. The thickness of the Au-Al intermetallic is found to be minimal at ∼4um after 1000 hours of HTS testing. This study has demonstrated that both thick copper and aluminum wire are capable of wire bonding at room temperature to function as a reliable interconnect with improved product performance and low cost. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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