Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
Autor: | Roman R. Khakimov, Maxim G. Kozodaev, A. G. Chernikova, Cheol Seong Hwang, E. V. Korostylev, Andrey M. Markeev, Min Hyuk Park |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Permittivity Materials science Doping General Physics and Astronomy 02 engineering and technology Crystal structure Coercivity 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity 0103 physical sciences Composite material Thin film 0210 nano-technology Polarization (electrochemistry) Monoclinic crystal system |
Zdroj: | Journal of Applied Physics. 125:034101 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.5050700 |
Popis: | The crystalline structure and electrical response of La-doped HfO2-ZrO2 thin films of which processing temperature did not exceed 400 °C were examined, where the La-doping concentration was varied from zero to ≈2 mol. %. The film structure and associated properties were found to vary sensitively with the minute variation in the La-concentration, where the ferroelectric response at low La-concentration ( ≈1 mol. %, which was accompanied by a significant increase in dielectric permittivity. La-doping was found to be very effective in inhibiting the monoclinic phase formation and in decreasing the leakage current. Notably, the high coercive field, which was one of the most significant problems in this material system, could be decreased by ∼35% at the most promising La-concentration of 0.7 mol. %. As a result, a highly promising field cycling endurance up to 1011 cycles could be secured while maintaining a high remnant polarization value (≥25 μC/cm2). This is one of the best results in this field of the authors' knowledge. |
Databáze: | OpenAIRE |
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