Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
| Autor: | D. E. Nikolitchev, Davud V. Guseinov, D. A. Pavlov, David Tetelbaum, A. I. Belov, A. N. Mikhaylov, A. V. Pirogov, D. S. Korolev, Andrey A. Shemukhin, V. K. Vasiliev, A. V. Nezhdanov, E. V. Okulich, S. I. Surodin |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Annealing (metallurgy) Layer by layer Analytical chemistry chemistry.chemical_element Gallium nitride 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound Ion implantation chemistry X-ray photoelectron spectroscopy Transmission electron microscopy 0103 physical sciences Gallium 0210 nano-technology |
| Zdroj: | Semiconductors. 50:271-275 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616020135 |
| Popis: | The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions. |
| Databáze: | OpenAIRE |
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