Barriers to the Adoption of Wide-Bandgap Semiconductors for Power Electronics
| Autor: | Daniel W. Cunningham, Isik C. Kizilyalli, Eric P. Carlson |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Wide-bandgap semiconductor chemistry.chemical_element Gallium nitride 02 engineering and technology Semiconductor device 021001 nanoscience & nanotechnology 01 natural sciences Engineering physics chemistry.chemical_compound Semiconductor chemistry Hardware_GENERAL Power electronics 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Silicon carbide 0210 nano-technology business Efficient energy use |
| Zdroj: | 2018 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm.2018.8614501 |
| Popis: | Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride and silicon carbide with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. However, even with the considerable materials advantages, a number of challenges are preventing widespread adoption of power electronics using WBG semiconductors. |
| Databáze: | OpenAIRE |
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