Characterization of silicon carbide surfaces of 6H-, 15R- and 3C-polytypes by optical second-harmonic generation in comparison with X-ray diffraction techniques
| Autor: | H. Schillinger, G. Marowsky, R. Sauerbrey, C. Jordan, K. Goetz, L. Dressler, Wo. Richter, S. Karmann |
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| Rok vydání: | 1997 |
| Předmět: |
Diffraction
Materials science business.industry Second-harmonic generation General Chemistry Molecular physics Characterization (materials science) chemistry.chemical_compound Optics Reflection (mathematics) chemistry X-ray crystallography Silicon carbide General Materials Science Penetration depth business Image resolution |
| Zdroj: | Applied Physics A: Materials Science & Processing. 65:251-257 |
| ISSN: | 1432-0630 0947-8396 |
| Popis: | Second-harmonic (SH) generation is a versatile method applicable to in-situ characterization of even non-centrosymmetric media like silicon carbide (SiC). In particular, the azimuthal rotational anisotropy of the SH response from SiC observed in reflection allows identification of various polytypes. The nonlinear-optical results are compared to X-ray diffraction data. The abundance of information obtained through the SH studies makes characteristic fingerprinting of the 6H, 15R, and 3C polytypes of SiC is possible. The spatial resolution of the optical sampling was about 50 μm in the lateral direction with a typical penetration depth of 100 nm for the fundamental radiation. Defect regions of different crystallographic structures in large SiC samples were identified by observing the spatially resolved dependence of the SH intensity. |
| Databáze: | OpenAIRE |
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